By Winfried Mönch (auth.), Winfried Mönch (eds.)
Interface and floor technological know-how were vital within the improvement of semicon ductor physics correct from the start on. glossy machine recommendations should not merely in line with p-n junctions, that are interfaces among areas containing types of dopants, yet benefit from the digital homes of semiconductor insulator interfaces, heterojunctions among targeted semiconductors, and steel semiconductor contacts. The latter ones stood nearly on the very starting of semi conductor physics on the finish of the final century. The rectifying houses of metal-semiconductor contacts have been first defined by means of Braun in 1874. A bodily right rationalization of unilateral conduction, as this deviation from Ohm's legislation used to be referred to as, couldn't take delivery of at the moment. A prerequisite was once Wilson's quantum idea of digital semi-conductors which he released in 1931. many years later, in 1938, Schottky eventually defined the rectification at metal-semiconductor contacts by way of a space-
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Extra resources for Electronic Structure of Metal-Semiconductor Contacts
Clabes et aI. studied the annealing behavior of V/Si(l11) contacts. Their results are shown in Fig. 3 of reprint R18. After the evaporation of vanadium at room temperature, the barrier height is lower than expected from the MIGS trend in Fig. 1 eV and to bring it exactly on the MIGS line shown in Fig. 3 of R28. In analogy to the recovery of, for example, radiation-damaged samples during heat treatments, this behavior may be 21 Winfried Monch attributed to the removal of defects generated during metal evaporation.
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